MTB06N03I3 MOSFET Transistor

The MTB06N03I3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB06N03I3 transistor as follows.

MTB06N03I3 Transistor Specification

Transistor Code		MTB06N03I3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0045Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		316pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Total Gate Charge		53nC

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