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MTB06N03H8 MOSFET Transistor

The MTB06N03H8 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB06N03H8 transistor as follows.

Circuit diagram symbol of the MTB06N03H8 transistor

MTB06N03H8 Transistor Specification

Transistor Code MTB06N03H8
Transistor Type MOSFET
Control Channel Type N-Channel
Package EDFN5X6
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 75A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0042Ohm
Power Dissipation (Maximum) PD 50W
Drain-Source Capacitance 308pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 13nS
Total Gate Charge 54nC

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