MTB060N06I3 MOSFET Transistor

The MTB060N06I3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB060N06I3 transistor as follows.

MTB060N06I3 Transistor Specification

Transistor Code		MTB060N06I3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.035Ohm
Power Dissipation (Maximum)	PD	20W
Drain-Source Capacitance		56pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5.2nS

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