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MTB050P10F3 MOSFET Transistor

The MTB050P10F3 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB050P10F3 transistor as follows.

Circuit diagram symbol of the MTB050P10F3 transistor

MTB050P10F3 Transistor Specification

Transistor Code MTB050P10F3
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO-263
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 40A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.046Ohm
Power Dissipation (Maximum) PD 200W
Drain-Source Capacitance 227pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 16.4nS
Total Gate Charge 45nC

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