MTB04N03E3 MOSFET Transistor

The MTB04N03E3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB04N03E3 transistor as follows.

MTB04N03E3 Transistor Specification

Transistor Code		MTB04N03E3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	115A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0038Ohm
Power Dissipation (Maximum)	PD	107W
Drain-Source Capacitance		432pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		10nS
Total Gate Charge		50nC

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