MTB032P06V8 MOSFET Transistor

The MTB032P06V8 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTB032P06V8 transistor as follows.

MTB032P06V8 Transistor Specification

Transistor Code		MTB032P06V8
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN3X3
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.029Ohm
Power Dissipation (Maximum)	PD	36W
Drain-Source Capacitance		109pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS

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