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MSW16N50 MOSFET Transistor

The MSW16N50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MSW16N50 transistor as follows.

Circuit diagram symbol of the MSW16N50 transistor

MSW16N50 Transistor Specification

Transistor Code MSW16N50
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-3P_TO-247
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 16A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.38Ohm
Power Dissipation (Maximum) PD 205W
Drain-Source Capacitance 330pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 180nS
Gate-Threshold Voltage (Maximum) 5V

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