The MSW10N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the MSW10N80 transistor as follows.
| Transistor Code | MSW10N80 | |
|---|---|---|
| Transistor Type | MOSFET | |
| Control Channel Type | N-Channel | |
| Package | TO-3P_TO-247 | |
| Drain-Source Voltage (Maximum) | VDS | 800V |
| Gate-Source Voltage (Maximum) | VGS | 30V |
| Drain Current (Maximum) | ID | 10A |
| Drain-Source On-State Resistance (Maximum) | RDS(on) | 1.1Ohm |
| Power Dissipation (Maximum) | PD | 240W |
| Drain-Source Capacitance | 230pF | |
| Operating Junction Temperature (Maximum) | 150°C | |
| Rise Time | 150nS | |
| Gate-Threshold Voltage (Maximum) | 5V | |
UXPython is not the creator or an official representative of the MSW10N80 MOSFET transistor. You can download the official MSW10N80 MOSFET transistor datasheet to get more infromation about this transistor.
Note : Copyrighted materials belong to their creator or official representative.
MSW9N90 MOSFET Transistor
20N65 MOSFET Transistor
MSW16N50 MOSFET Transistor
UF460 MOSFET Transistor
22N65 MOSFET Transistor
MSW20N60 MOSFET Transistor
Copyright © UXPython inc. All rights reserved.
Devoloped by UXPython.