MSU8N50Q MOSFET Transistor

The MSU8N50Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MSU8N50Q transistor as follows.

MSU8N50Q Transistor Specification

Transistor Code		MSU8N50Q
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-262
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.85Ohm
Power Dissipation (Maximum)	PD	134W
Drain-Source Capacitance		200pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		21nS
Gate-Threshold Voltage (Maximum)		4V

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