MSU1N60T MOSFET Transistor

The MSU1N60T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MSU1N60T transistor as follows.

MSU1N60T Transistor Specification

Transistor Code		MSU1N60T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	11.5Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		20pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		4V

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