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MSU1N60D MOSFET Transistor

The MSU1N60D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MSU1N60D transistor as follows.

Circuit diagram symbol of the MSU1N60D transistor

MSU1N60D Transistor Specification

Transistor Code MSU1N60D
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-252
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 11.5Ohm
Power Dissipation (Maximum) PD 28W
Drain-Source Capacitance 20pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25nS
Gate-Threshold Voltage (Maximum) 4V

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