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MSU12N60F MOSFET Transistor

The MSU12N60F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MSU12N60F transistor as follows.

Circuit diagram symbol of the MSU12N60F transistor

MSU12N60F Transistor Specification

Transistor Code MSU12N60F
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.8Ohm
Power Dissipation (Maximum) PD 51W
Drain-Source Capacitance 200pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 115nS
Gate-Threshold Voltage (Maximum) 4V

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