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MSQ6N40 MOSFET Transistor

The MSQ6N40 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MSQ6N40 transistor as follows.

Circuit diagram symbol of the MSQ6N40 transistor

MSQ6N40 Transistor Specification

Transistor Code MSQ6N40
Transistor Type MOSFET
Control Channel Type N-Channel
Package QFN5X6
Drain-Source Voltage (Maximum) VDS 400V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 5.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 1Ohm
Power Dissipation (Maximum) PD 38W
Drain-Source Capacitance 95pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 50nS
Gate-Threshold Voltage (Maximum) 4V

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