MSQ5N50 MOSFET Transistor

The MSQ5N50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MSQ5N50 transistor as follows.

MSQ5N50 Transistor Specification

Transistor Code		MSQ5N50
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		QFN5X6
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.4Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		66pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		22nS
Gate-Threshold Voltage (Maximum)		4V

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