MSP2301N3 MOSFET Transistor

The MSP2301N3 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MSP2301N3 transistor as follows.

MSP2301N3 Transistor Specification

Transistor Code		MSP2301N3
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-23
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	2.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.13Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		127pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		19nS
Gate-Threshold Voltage (Maximum)		0.45V

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