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MSK7N80T MOSFET Transistor

The MSK7N80T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MSK7N80T transistor as follows.

Circuit diagram symbol of the MSK7N80T transistor

MSK7N80T Transistor Specification

Transistor Code MSK7N80T
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 7A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.55Ohm
Power Dissipation (Maximum) PD 167W
Drain-Source Capacitance 141pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 63.5nS
Gate-Threshold Voltage (Maximum) 4V

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