MSK4N80F MOSFET Transistor

The MSK4N80F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MSK4N80F transistor as follows.

MSK4N80F Transistor Specification

Transistor Code		MSK4N80F
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.6Ohm
Power Dissipation (Maximum)	PD	43W
Drain-Source Capacitance		68pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		59.5nS
Gate-Threshold Voltage (Maximum)		4V

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