MSK1N3 MOSFET Transistor

The MSK1N3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MSK1N3 transistor as follows.

MSK1N3 Transistor Specification

Transistor Code		MSK1N3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-23
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.115A
Drain-Source On-State Resistance (Maximum)	RDS(on)	5.5Ohm
Power Dissipation (Maximum)	PD	0.2W
Drain-Source Capacitance		3.42pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		1nS
Gate-Threshold Voltage (Maximum)		2.5V

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