MSF8N60 MOSFET Transistor

The MSF8N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MSF8N60 transistor as follows.

MSF8N60 Transistor Specification

Transistor Code		MSF8N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	48W
Drain-Source Capacitance		121.7pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11.8nS
Gate-Threshold Voltage (Maximum)		4V

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