MSD50N10 MOSFET Transistor

The MSD50N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MSD50N10 transistor as follows.

MSD50N10 Transistor Specification

Transistor Code		MSD50N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	44A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	50W
Operating Junction Temperature (Maximum)		175°C
Rise Time		31nS
Gate-Threshold Voltage (Maximum)		1V

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