MSD30N06 MOSFET Transistor

The MSD30N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MSD30N06 transistor as follows.

MSD30N06 Transistor Specification

Transistor Code		MSD30N06
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.038Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		147pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		12.8nS
Gate-Threshold Voltage (Maximum)		1V

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