MSD23N22 MOSFET Transistor

The MSD23N22 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MSD23N22 transistor as follows.

MSD23N22 Transistor Specification

Transistor Code		MSD23N22
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-23
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.085Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		165pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		13nS
Gate-Threshold Voltage (Maximum)		3V

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