MMQ60R115PTH MOSFET Transistor

The MMQ60R115PTH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MMQ60R115PTH transistor as follows.

MMQ60R115PTH Transistor Specification

Transistor Code		MMQ60R115PTH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Transistor SMD Code		60R115P
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	33A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.115Ohm
Power Dissipation (Maximum)	PD	255W
Drain-Source Capacitance		1780pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		105nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		79nC

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