MMQ60R115PCTH MOSFET Transistor

The MMQ60R115PCTH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MMQ60R115PCTH transistor as follows.

MMQ60R115PCTH Transistor Specification

Transistor Code		MMQ60R115PCTH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Transistor SMD Code		60R115PC
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	33A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.115Ohm
Power Dissipation (Maximum)	PD	255W
Drain-Source Capacitance		1770pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		114nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		77nC

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