MMQ60R070PTH MOSFET Transistor

The MMQ60R070PTH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MMQ60R070PTH transistor as follows.

MMQ60R070PTH Transistor Specification

Transistor Code		MMQ60R070PTH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Transistor SMD Code		60R070P
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	53A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.07Ohm
Power Dissipation (Maximum)	PD	391W
Drain-Source Capacitance		2965pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		200nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		132nC

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