MMP4435BDY MOSFET Transistor

The MMP4435BDY is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MMP4435BDY transistor as follows.

MMP4435BDY Transistor Specification

Transistor Code		MMP4435BDY
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	2.5W
Operating Junction Temperature (Maximum)		150°C
Rise Time		5.04nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		33.82nC

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