MMN8218 MOSFET Transistor

The MMN8218 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MMN8218 transistor as follows.

MMN8218 Transistor Specification

Transistor Code		MMN8218
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSSOP-8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		63.85pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4.998nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		1.449nC

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