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MMN8218 MOSFET Transistor

The MMN8218 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MMN8218 transistor as follows.

Circuit diagram symbol of the MMN8218 transistor

MMN8218 Transistor Specification

Transistor Code MMN8218
Transistor Type MOSFET
Control Channel Type N-Channel
Package TSSOP-8
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.025Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 63.85pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 4.998nS
Gate-Threshold Voltage (Maximum) 1V
Total Gate Charge 1.449nC

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