MMN65N03 MOSFET Transistor

The MMN65N03 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MMN65N03 transistor as follows.

MMN65N03 Transistor Specification

Transistor Code		MMN65N03
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	55A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.005Ohm
Power Dissipation (Maximum)	PD	115W
Drain-Source Capacitance		561.81pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9.92nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		28.8nC

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