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MMN60NF06 MOSFET Transistor

The MMN60NF06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MMN60NF06 transistor as follows.

Circuit diagram symbol of the MMN60NF06 transistor

MMN60NF06 Transistor Specification

Transistor Code MMN60NF06
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 60A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.016Ohm
Power Dissipation (Maximum) PD 110W
Drain-Source Capacitance 279.8pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 15.4nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 81.4nC

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