MML60R190PTH MOSFET Transistor

The MML60R190PTH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MML60R190PTH transistor as follows.

MML60R190PTH Transistor Specification

Transistor Code		MML60R190PTH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-262
Transistor SMD Code		60R190P
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.19Ohm
Power Dissipation (Maximum)	PD	154W
Drain-Source Capacitance		1250pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		73nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		51nC

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