MMIX1T600N04T2 MOSFET Transistor

The MMIX1T600N04T2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MMIX1T600N04T2 transistor as follows.

MMIX1T600N04T2 Transistor Specification

Transistor Code		MMIX1T600N04T2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	600A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0013Ohm<
Power Dissipation (Maximum)	PD	830W
Operating Junction Temperature (Maximum)		175°C
Rise Time		100nS
Gate-Threshold Voltage (Maximum)		3.5V
Total Gate Charge		590nC

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