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MMIX1F420N10T MOSFET Transistor

The MMIX1F420N10T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MMIX1F420N10T transistor as follows.

Circuit diagram symbol of the MMIX1F420N10T transistor

MMIX1F420N10T Transistor Specification

Transistor Code MMIX1F420N10T
Transistor Type MOSFET
Control Channel Type N-Channel
Package ISOLATED_TAB
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 334A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0026Ohm
Power Dissipation (Maximum) PD 680W
Drain-Source Capacitance 4390pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 155nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 670nC

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