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MMIX1F180N25T MOSFET Transistor

The MMIX1F180N25T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MMIX1F180N25T transistor as follows.

Circuit diagram symbol of the MMIX1F180N25T transistor

MMIX1F180N25T Transistor Specification

Transistor Code MMIX1F180N25T
Transistor Type MOSFET
Control Channel Type N-Channel
Package ISOLATED_TAB
Drain-Source Voltage (Maximum) VDS 250V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 130A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.013Ohm
Power Dissipation (Maximum) PD 570W
Drain-Source Capacitance 2050pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 33nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 345nC

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