MMIS60R900PTH MOSFET Transistor

The MMIS60R900PTH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MMIS60R900PTH transistor as follows.

MMIS60R900PTH Transistor Specification

Transistor Code		MMIS60R900PTH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Transistor SMD Code		60R900P
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.9Ohm
Power Dissipation (Maximum)	PD	38W
Drain-Source Capacitance		306pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		29nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		12.3nC

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