MMIS60R580PTH MOSFET Transistor

The MMIS60R580PTH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MMIS60R580PTH transistor as follows.

MMIS60R580PTH Transistor Specification

Transistor Code		MMIS60R580PTH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Transistor SMD Code		60R580P
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.58Ohm
Power Dissipation (Maximum)	PD	70W
Drain-Source Capacitance		428pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		34nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		18nC

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