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MMFTN501 MOSFET Transistor

The MMFTN501 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MMFTN501 transistor as follows.

Circuit diagram symbol of the MMFTN501 transistor

MMFTN501 Transistor Specification

Transistor Code MMFTN501
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO236
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 0.03A
Drain-Source On-State Resistance (Maximum) RDS(on) 700Ohm
Power Dissipation (Maximum) PD 0.5W
Drain-Source Capacitance 4.53pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 55.8nS

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