MMFTN3019E MOSFET Transistor

The MMFTN3019E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MMFTN3019E transistor as follows.

MMFTN3019E Transistor Specification

Transistor Code		MMFTN3019E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT523
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	8Ohm
Power Dissipation (Maximum)	PD	0.15W
Drain-Source Capacitance		9pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		35nS

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