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MMFT2955ET1 MOSFET Transistor

The MMFT2955ET1 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MMFT2955ET1 transistor as follows.

Circuit diagram symbol of the MMFT2955ET1 transistor

MMFT2955ET1 Transistor Specification

Transistor Code MMFT2955ET1
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT-223
Transistor SMD Code 2955E
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 15V
Drain Current (Maximum) ID 1.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.3Ohm
Power Dissipation (Maximum) PD 0.8W
Drain-Source Capacitance 210pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 29nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 18nC

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