MMF80R900PTH MOSFET Transistor

The MMF80R900PTH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MMF80R900PTH transistor as follows.

MMF80R900PTH Transistor Specification

Transistor Code		MMF80R900PTH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Transistor SMD Code		80R900P
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.9Ohm
Power Dissipation (Maximum)	PD	29.8W
Drain-Source Capacitance		508pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		22.4nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		17.6nC

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