MMDF3N02HDR2G MOSFET Transistor

The MMDF3N02HDR2G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MMDF3N02HDR2G transistor as follows.

MMDF3N02HDR2G Transistor Specification

Transistor Code		MMDF3N02HDR2G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Transistor SMD Code		D3N02
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.09Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		184pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		58nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		12.5nC

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