MMDF1N05ER2G MOSFET Transistor

The MMDF1N05ER2G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MMDF1N05ER2G transistor as follows.

MMDF1N05ER2G Transistor Specification

Transistor Code		MMDF1N05ER2G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Transistor SMD Code		F1N05
Drain-Source Voltage (Maximum)	VDS	50V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.3Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		160pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		12.5nC

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