MMD80R900PRH MOSFET Transistor

The MMD80R900PRH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MMD80R900PRH transistor as follows.

MMD80R900PRH Transistor Specification

Transistor Code		MMD80R900PRH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Transistor SMD Code		80R900P
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.9Ohm
Power Dissipation (Maximum)	PD	75.8W
Drain-Source Capacitance		508pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		22.4nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		17.6nC

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