MMBT7002E MOSFET Transistor

The MMBT7002E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MMBT7002E transistor as follows.

MMBT7002E Transistor Specification

Transistor Code		MMBT7002E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT523
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.115A
Drain-Source On-State Resistance (Maximum)	RDS(on)	7.5Ohm
Power Dissipation (Maximum)	PD	0.15W
Drain-Source Capacitance		25pF
Operating Junction Temperature (Maximum)		150°C

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