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MLD1N06CL MOSFET Transistor

The MLD1N06CL is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MLD1N06CL transistor as follows.

Circuit diagram symbol of the MLD1N06CL transistor

MLD1N06CL Transistor Specification

Transistor Code MLD1N06CL
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK4
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 2.75A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.75Ohm
Power Dissipation (Maximum) PD 40W

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