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MKE11R600DCGFC MOSFET Transistor

The MKE11R600DCGFC is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MKE11R600DCGFC transistor as follows.

Circuit diagram symbol of the MKE11R600DCGFC transistor

MKE11R600DCGFC Transistor Specification

Transistor Code MKE11R600DCGFC
Transistor Type MOSFET
Control Channel Type N-Channel
Package I4PAC
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 15A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.165Ohm
Power Dissipation (Maximum) PD 50W
Operating Junction Temperature (Maximum) 150°C
Rise Time 390nS
Gate-Threshold Voltage (Maximum) 3.5V
Total Gate Charge 40nC

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