MEP4435Q8 MOSFET Transistor

The MEP4435Q8 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MEP4435Q8 transistor as follows.

MEP4435Q8 Transistor Specification

Transistor Code		MEP4435Q8
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOP-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	13A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0093Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		323pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Total Gate Charge		35nC

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