MDZ1N60UMH MOSFET Transistor

The MDZ1N60UMH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDZ1N60UMH transistor as follows.

MDZ1N60UMH Transistor Specification

Transistor Code		MDZ1N60UMH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-92
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	8.5Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		1pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		17nS
Gate-Threshold Voltage (Maximum)		5V

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