MDU5512URH MOSFET Transistor

The MDU5512URH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDU5512URH transistor as follows.

MDU5512URH Transistor Specification

Transistor Code		MDU5512URH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PDFN56
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	11.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0089Ohm
Power Dissipation (Maximum)	PD	1.9W
Drain-Source Capacitance		196pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10.9nS
Gate-Threshold Voltage (Maximum)		2.4V

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