MDU1931VRH MOSFET Transistor

The MDU1931VRH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDU1931VRH transistor as follows.

MDU1931VRH Transistor Specification

Transistor Code		MDU1931VRH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PDFN56
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0036Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		1.05pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		41nS
Gate-Threshold Voltage (Maximum)		4V

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