MDS5651URH MOSFET Transistor

The MDS5651URH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDS5651URH transistor as follows.

MDS5651URH Transistor Specification

Transistor Code		MDS5651URH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.026Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		102pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4.2nS
Gate-Threshold Voltage (Maximum)		3V

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